Parameters | |
---|---|
Packaging | Tube |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | MATTE TIN |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT APPLICABLE |
Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE |
Pin Count | 3 |
JESD-30 Code | R-PSIP-T3 |
Qualification Status | COMMERCIAL |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 3.8W Ta 42W Tc |
Operating Mode | ENHANCEMENT MODE |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 29m Ω @ 7.7A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1.76pF @ 40V |
Current - Continuous Drain (Id) @ 25°C | 7.7A Ta |
Gate Charge (Qg) (Max) @ Vgs | 79nC @ 10V |
Drain to Source Voltage (Vdss) | 80V |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Drain Current-Max (Abs) (ID) | 7.7A |
Drain-source On Resistance-Max | 0.029Ohm |
Pulsed Drain Current-Max (IDM) | 50A |
DS Breakdown Voltage-Min | 80V |
Avalanche Energy Rating (Eas) | 245 mJ |
RoHS Status | ROHS3 Compliant |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |