Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 15 hours ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Manufacturer Package Identifier | SOT−23 (TO−236) CASE 318−08 ISSUE AR |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 1999 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 4Ohm |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 25V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 220mA |
Time@Peak Reflow Temperature-Max (s) | 30 |
Number of Elements | 1 |
Number of Channels | 1 |
Voltage | 50V |
Power Dissipation-Max | 350mW Ta |
Element Configuration | Single |
Current | 2A |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 350mW |
Turn On Delay Time | 3.2 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 4 Ω @ 400mA, 4.5V |
Vgs(th) (Max) @ Id | 1.06V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 220mA Ta |
Gate Charge (Qg) (Max) @ Vgs | 0.7nC @ 4.5V |
Rise Time | 6ns |
Drive Voltage (Max Rds On,Min Rds On) | 2.7V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 6 ns |
Turn-Off Delay Time | 3.5 ns |
Continuous Drain Current (ID) | 220mA |
Gate to Source Voltage (Vgs) | 8V |
Drain to Source Breakdown Voltage | 25V |
Dual Supply Voltage | 25V |
Max Junction Temperature (Tj) | 150°C |
Nominal Vgs | 850 mV |
Height | 1.11mm |
Length | 2.92mm |
Width | 3.05mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |