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FDWS9509L-F085

PMOS PWR56 40V 8 MOHM


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDWS9509L-F085
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 445
  • Description: PMOS PWR56 40V 8 MOHM (Kg)

Details

Tags

Parameters
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 107W Tj
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 65A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3360pF @ 20V
Current - Continuous Drain (Id) @ 25°C 65A Tc
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
JEDEC-95 Code MO-240AA
Drain Current-Max (Abs) (ID) 65A
Drain-source On Resistance-Max 0.0153Ohm
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 84 mJ
Turn Off Time-Max (toff) 405ns
Turn On Time-Max (ton) 22ns
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series Automotive, AEC-Q101, PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
See Relate Datesheet

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