Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-UFBGA, WLCSP |
Number of Pins | 6 |
Weight | 54mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2016 |
Series | PowerTrench® |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Resistance | 90MOhm |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Terminal Form | BALL |
Number of Elements | 1 |
Power Dissipation-Max | 1.9W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.5W |
Turn On Delay Time | 13 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 90m Ω @ 1A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 3A Ta |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
Rise Time | 10ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 1.7V 4.5V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 10 ns |
Turn-Off Delay Time | 28 ns |
Continuous Drain Current (ID) | -3A |
Threshold Voltage | -900mV |
Gate to Source Voltage (Vgs) | 12V |
Drain Current-Max (Abs) (ID) | 3A |
Drain to Source Breakdown Voltage | -20V |
Nominal Vgs | -900 mV |
Height | 650μm |
Length | 1mm |
Width | 1.5mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |