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FDZ375P

MOSFET P-CH 20V WLCSP 1X1


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FDZ375P
  • Package: 4-XFBGA, WLCSP
  • Datasheet: PDF
  • Stock: 691
  • Description: MOSFET P-CH 20V WLCSP 1X1 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-XFBGA, WLCSP
Number of Pins 4
Weight 68.4mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Number of Elements 1
Power Dissipation-Max 1.7W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.7W
Turn On Delay Time 5.3 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 78m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 865pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.7A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time 8.2ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 84 ns
Turn-Off Delay Time 138 ns
Continuous Drain Current (ID) 3.7A
Threshold Voltage -500mV
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.078Ohm
Drain to Source Breakdown Voltage -20V
Nominal Vgs -500 mV
Height 400μm
Length 1mm
Width 1mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet

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