Parameters | |
---|---|
Lifecycle Status | LAST SHIPMENTS (Last Updated: 3 days ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 4-UFBGA, WLCSP |
Number of Pins | 4 |
Weight | 42mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~125°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2016 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature | ESD PROTECTION |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Terminal Form | BALL |
Number of Elements | 1 |
Power Dissipation-Max | 1W Ta |
Element Configuration | Single |
Operating Mode | DEPLETION MODE |
Power Dissipation | 1W |
Turn On Delay Time | 3.1 ns |
Forward Current | 1.1A |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 462m Ω @ 300mA, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 85pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 1.1A Ta |
Gate Charge (Qg) (Max) @ Vgs | 1nC @ 4.5V |
Rise Time | 1.9ns |
Drive Voltage (Max Rds On,Min Rds On) | 3.2V 4.5V |
Vgs (Max) | +5.5V, -0.3V |
Fall Time (Typ) | 2.7 ns |
Turn-Off Delay Time | 9.6 ns |
Reverse Recovery Time | 29 ns |
Continuous Drain Current (ID) | 1.1A |
Threshold Voltage | 700mV |
Peak Reverse Current | 300μA |
Max Repetitive Reverse Voltage (Vrrm) | 25V |
Gate to Source Voltage (Vgs) | 5.5V |
Drain-source On Resistance-Max | 0.52Ohm |
Drain to Source Breakdown Voltage | 30V |
FET Feature | Schottky Diode (Body) |
Nominal Vgs | 700 mV |
Feedback Cap-Max (Crss) | 25 pF |
Height | 332μm |
Length | 1mm |
Width | 1mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |