Parameters | |
---|---|
Mounting Type | Surface Mount |
Package / Case | 18-WFBGA |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | PowerTrench® |
JESD-609 Code | e2 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 18 |
Terminal Finish | TIN SILVER |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Terminal Form | BALL |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | unknown |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 18 |
JESD-30 Code | R-PBGA-B18 |
Qualification Status | COMMERCIAL |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 2.1W Ta |
Operating Mode | ENHANCEMENT MODE |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 8.5m Ω @ 11A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1.52pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 11A Ta |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Drain Current-Max (Abs) (ID) | 11A |
Drain-source On Resistance-Max | 0.0085Ohm |
Pulsed Drain Current-Max (IDM) | 20A |
DS Breakdown Voltage-Min | 30V |
RoHS Status | ROHS3 Compliant |