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FF200R12KE3HOSA1

IGBT Array & Module Transistor, N Channel, 295 A, 1.7 V, 1.05 kW, 1.2 kV, Module


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-FF200R12KE3HOSA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 976
  • Description: IGBT Array & Module Transistor, N Channel, 295 A, 1.7 V, 1.05 kW, 1.2 kV, Module (Kg)

Details

Tags

Parameters
Input Capacitance (Cies) @ Vce 14nF @ 25V
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~125°C
Published 2002
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 7
JESD-30 Code R-XUFM-X7
Qualification Status Not Qualified
Number of Elements 2
Configuration 2 Independent
Element Configuration Dual
Case Connection ISOLATED
Power - Max 1050W
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 400 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 200A
Turn Off Time-Nom (toff) 830 ns
NTC Thermistor Yes
See Relate Datesheet

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