banner_page

FF200R12KS4HOSA1

IGBT Array & Module Transistor, N Channel, 275 A, 3.2 V, 1.4 kW, 1.2 kV, Module


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-FF200R12KS4HOSA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 108
  • Description: IGBT Array & Module Transistor, N Channel, 275 A, 3.2 V, 1.4 kW, 1.2 kV, Module (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -40°C~125°C
Published 2002
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Additional Feature FAST
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
Number of Elements 2
Configuration 2 Independent
Element Configuration Dual
Power Dissipation 1.4kW
Case Connection ISOLATED
Power - Max 1400W
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 275A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.2V
Turn On Time 180 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 200A
Turn Off Time-Nom (toff) 590 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 13nF @ 25V
RoHS Status RoHS Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good