banner_page

FF225R12ME4B11BPSA1

IGBT MODULE VCES 1200V 225A


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-FF225R12ME4B11BPSA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 982
  • Description: IGBT MODULE VCES 1200V 225A (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Packaging Bulk
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 11
ECCN Code EAR99
Additional Feature UL APPROVED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X11
Number of Elements 2
Configuration 2 Independent
Element Configuration Dual
Case Connection ISOLATED
Power - Max 1050W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 3mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 320A
Turn On Time 220 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 225A
Turn Off Time-Nom (toff) 600 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 13nF @ 25V
RoHS Status RoHS Compliant
Lead Free Contains Lead
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good