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FF450R12ME4PB11BOSA1

FF450R12ME4PB11BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-FF450R12ME4PB11BOSA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 926
  • Description: FF450R12ME4PB11BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 11
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X11
Number of Elements 2
Configuration 2 Independent
Case Connection ISOLATED
Turn On Delay Time 190 ns
Polarity/Channel Type N-CHANNEL
Input Standard
Turn-Off Delay Time 490 ns
Collector Emitter Voltage (VCEO) 1.2kV
Current - Collector Cutoff (Max) 3mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.75V
Turn On Time 290 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 450A
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 450A
Turn Off Time-Nom (toff) 740 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 28nF @ 25V
Height 17.5mm
RoHS Status RoHS Compliant
See Relate Datesheet

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