FF600R12ME4BOSA1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Screw |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Number of Pins | 11 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C |
| Published | 2002 |
| Pbfree Code | no |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 7 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 11 |
| JESD-30 Code | R-XUFM-X7 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | 2 Independent |
| Element Configuration | Dual |
| Power Dissipation | 4.05kW |
| Case Connection | ISOLATED |
| Power - Max | 4050W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 600A |
| Current - Collector Cutoff (Max) | 3mA |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 2.1V |
| Turn On Time | 310 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 600A |
| Turn Off Time-Nom (toff) | 770 ns |
| IGBT Type | Trench Field Stop |
| NTC Thermistor | Yes |
| Gate-Emitter Voltage-Max | 20V |
| Input Capacitance (Cies) @ Vce | 37nF @ 25V |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
