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FF650R17IE4D_B2

INFINEON FF650R17IE4D_B2 IGBT Array & Module Transistor, N Channel, 650 A, 2 V, 4.15 kW, 1.7 kV, Module


  • Manufacturer: Infineon
  • Nocochips NO: 9152-FF650R17IE4D_B2
  • Package: Module
  • Datasheet: -
  • Stock: 277
  • Description: INFINEON FF650R17IE4D_B2 IGBT Array & Module Transistor, N Channel, 650 A, 2 V, 4.15 kW, 1.7 kV, Module (Kg)

Details

Tags

Parameters
Mount Screw
Package / Case Module
Number of Pins 10
Pbfree Code no
Number of Terminations 10
Terminal Finish NOT SPECIFIED
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Power Dissipation-Max 4.15kW
Element Configuration Dual
Case Connection ISOLATED
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 930A
Collector Emitter Breakdown Voltage 1.7kV
Collector Emitter Saturation Voltage 2V
Turn On Time 765 ns
Turn Off Time-Nom (toff) 1870 ns
REACH SVHC Unknown
RoHS Status RoHS Compliant
Lead Free Contains Lead
See Relate Datesheet

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