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FF650R17IE4PBOSA1

IGBT MODULE VCES 1700V 650A


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-FF650R17IE4PBOSA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 824
  • Description: IGBT MODULE VCES 1700V 650A (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 10
ECCN Code EAR99
Additional Feature UL APPROVED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PUFM-X10
Number of Elements 2
Configuration 2 Independent
Element Configuration Dual
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.7kV
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 650A
Turn On Time 720 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 650A
Turn Off Time-Nom (toff) 1870 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 54nF @ 25V
RoHS Status RoHS Compliant
See Relate Datesheet

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