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FFB5551

Bipolar Transistors - BJT NPN MULTI-CHIP GEN PURPOSE


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FFB5551
  • Package: 6-TSSOP, SC-88, SOT-363
  • Datasheet: PDF
  • Stock: 884
  • Description: Bipolar Transistors - BJT NPN MULTI-CHIP GEN PURPOSE (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 28mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 160V
Max Power Dissipation 200mW
Terminal Form GULL WING
Current Rating 200mA
Frequency 300MHz
Base Part Number FFB5551
Number of Elements 2
Polarity NPN
Element Configuration Dual
Power Dissipation 200mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 300MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 160V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 200mV
Max Breakdown Voltage 160V
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 6V
hFE Min 80
Height 1mm
Length 2mm
Width 1.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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