Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Number of Pins | 3 |
Weight | 6.401g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2016 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
HTS Code | 8541.29.00.95 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 348W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Rise Time-Max | 490ns |
Element Configuration | Single |
Input Type | Standard |
Power - Max | 348W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.3kV |
Max Collector Current | 60A |
Collector Emitter Breakdown Voltage | 1.3kV |
Voltage - Collector Emitter Breakdown (Max) | 1300V |
Collector Emitter Saturation Voltage | 2.3V |
Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 30A |
IGBT Type | Trench Field Stop |
Gate Charge | 78nC |
Current - Collector Pulsed (Icm) | 150A |
Gate-Emitter Voltage-Max | 25V |
Gate-Emitter Thr Voltage-Max | 7.5V |
Height | 20.1mm |
Length | 15.8mm |
Width | 5mm |
RoHS Status | ROHS3 Compliant |