Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Number of Pins | 3 |
Weight | 6.401g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2008 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Additional Feature | LOW CONDUCTION LOSS |
HTS Code | 8541.29.00.95 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 349W |
Number of Elements | 1 |
Rise Time-Max | 28ns |
Element Configuration | Single |
Power Dissipation | 349W |
Input Type | Standard |
Turn On Delay Time | 12 ns |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 92 ns |
Collector Emitter Voltage (VCEO) | 650V |
Max Collector Current | 80A |
Reverse Recovery Time | 42 ns |
Collector Emitter Breakdown Voltage | 650V |
Collector Emitter Saturation Voltage | 2.5V |
Test Condition | 400V, 40A, 6 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
IGBT Type | Field Stop |
Gate Charge | 119nC |
Current - Collector Pulsed (Icm) | 120A |
Td (on/off) @ 25°C | 12ns/92ns |
Switching Energy | 820μJ (on), 260μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6V |
Fall Time-Max (tf) | 17ns |
Height | 20.1mm |
Length | 16.2mm |
Width | 5mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |