FGA50N100BNTD2
| Parameters | |
|---|---|
| Weight | 6.401g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.29.00.95 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 156W |
| Number of Elements | 1 |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 156W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1kV |
| Max Collector Current | 50A |
| Reverse Recovery Time | 75 ns |
| Collector Emitter Breakdown Voltage | 1kV |
| Voltage - Collector Emitter Breakdown (Max) | 1000V |
| Collector Emitter Saturation Voltage | 1.5V |
| Turn On Time | 102 ns |
| Test Condition | 600V, 60A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 60A |
| Turn Off Time-Nom (toff) | 308 ns |
| IGBT Type | NPT and Trench |
| Gate Charge | 257nC |
| Current - Collector Pulsed (Icm) | 200A |
| Td (on/off) @ 25°C | 34ns/243ns |
| Gate-Emitter Voltage-Max | 25V |
| Gate-Emitter Thr Voltage-Max | 7V |
| Fall Time-Max (tf) | 100ns |
| Height | 20.1mm |
| Length | 15.8mm |
| Width | 5mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
See Relate Datesheet
