FGA50S110P
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Weight | 6.401g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2013 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.29.00.95 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 300W |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 300W |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.1kV |
| Max Collector Current | 50A |
| Collector Emitter Breakdown Voltage | 1.1kV |
| Voltage - Collector Emitter Breakdown (Max) | 1100V |
| Collector Emitter Saturation Voltage | 2.7V |
| Turn On Time | 370 ns |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 50A |
| Turn Off Time-Nom (toff) | 492 ns |
| IGBT Type | Trench Field Stop |
| Gate Charge | 195nC |
| Current - Collector Pulsed (Icm) | 120A |
| Gate-Emitter Voltage-Max | 25V |
| Gate-Emitter Thr Voltage-Max | 7.5V |
| Height | 20.1mm |
| Length | 15.8mm |
| Width | 5mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
See Relate Datesheet
