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FGA60N65SMD

FGA60N65SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FGA60N65SMD
  • Package: TO-3P-3, SC-65-3
  • Datasheet: PDF
  • Stock: 223
  • Description: FGA60N65SMD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 600W
Number of Elements 1
Rise Time-Max 70ns
Element Configuration Single
Input Type Standard
Turn On Delay Time 18 ns
Power - Max 600W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 104 ns
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 120A
Reverse Recovery Time 47 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.9V
Test Condition 400V, 60A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 60A
IGBT Type Field Stop
Gate Charge 189nC
Current - Collector Pulsed (Icm) 180A
Td (on/off) @ 25°C 18ns/104ns
Switching Energy 1.54mJ (on), 450μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 68ns
Height 20.1mm
Length 15.8mm
Width 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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