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FGAF40N60UFTU

FGAF40N60UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FGAF40N60UFTU
  • Package: TO-3P-3 Full Pack
  • Datasheet: PDF
  • Stock: 863
  • Description: FGAF40N60UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Number of Pins 3
Weight 6.962g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 100W
Current Rating 40A
Number of Elements 1
Element Configuration Single
Power Dissipation 100W
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
Continuous Drain Current (ID) 40A
Collector Emitter Breakdown Voltage 600V
Drain to Source Breakdown Voltage 600V
Collector Emitter Saturation Voltage 3V
Turn On Time 67 ns
Test Condition 300V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A
Turn Off Time-Nom (toff) 190 ns
Gate Charge 77nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 15ns/65ns
Switching Energy 470μJ (on), 130μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 250ns
Height 26.5mm
Length 15.5mm
Width 5.5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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