FGB20N60SFD
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Weight | 1.31247g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOW CONDUCTION LOSS |
| HTS Code | 8541.29.00.95 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 208W |
| Terminal Form | GULL WING |
| Base Part Number | FGB20N60 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 83W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 208W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 40A |
| Reverse Recovery Time | 34 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.8V |
| Max Breakdown Voltage | 600V |
| Turn On Time | 28 ns |
| Test Condition | 400V, 20A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 20A |
| Turn Off Time-Nom (toff) | 123 ns |
| IGBT Type | Field Stop |
| Gate Charge | 65nC |
| Current - Collector Pulsed (Icm) | 60A |
| Td (on/off) @ 25°C | 13ns/90ns |
| Switching Energy | 370μJ (on), 160μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Fall Time-Max (tf) | 48ns |
| Height | 4.83mm |
| Length | 10.67mm |
| Width | 9.65mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
