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FGB20N60SFD-F085

FGB20N60SFD-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FGB20N60SFD-F085
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 868
  • Description: FGB20N60SFD-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 208W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number FGB20N60
JESD-30 Code R-PSSO-G2
Number of Elements 1
Rise Time-Max 21ns
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 208W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
Reverse Recovery Time 111 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.4V
Max Breakdown Voltage 600V
Turn On Time 28 ns
Test Condition 400V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.85V @ 15V, 20A
Turn Off Time-Nom (toff) 123 ns
IGBT Type Field Stop
Gate Charge 63nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 10ns/90ns
Switching Energy 310μJ (on), 130μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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