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FGB3236-F085

FGB3236-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FGB3236-F085
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 981
  • Description: FGB3236-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, EcoSPARK®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 187W
Terminal Form GULL WING
Base Part Number FGB3236
JESD-30 Code R-PSSO-G2
Number of Elements 1
Rise Time-Max 7000ns
Element Configuration Single
Case Connection COLLECTOR
Input Type Logic
Power - Max 187W
Clamping Voltage 360V
Transistor Application AUTOMOTIVE IGNITION
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.32V
Max Collector Current 44A
Collector Emitter Breakdown Voltage 360V
Max Breakdown Voltage 360V
Turn On Time 2350 ns
Test Condition 300V, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic 1.4V @ 4V, 6A
Turn Off Time-Nom (toff) 7040 ns
Gate Charge 20nC
Td (on/off) @ 25°C -/5.4μs
Gate-Emitter Voltage-Max 12V
Gate-Emitter Thr Voltage-Max 2.2V
Fall Time-Max (tf) 15000ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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