Parameters | |
---|---|
Switching Energy | 870μJ (on), 260μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6V |
Fall Time-Max (tf) | 17ns |
Height | 4.83mm |
Length | 10.67mm |
Width | 9.65mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Weight | 1.31247g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
HTS Code | 8541.29.00.95 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 349W |
Terminal Form | GULL WING |
Base Part Number | FGB40N60 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Rise Time-Max | 28ns |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 349W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 80A |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2.3V |
Max Breakdown Voltage | 600V |
Turn On Time | 37 ns |
Test Condition | 400V, 40A, 6 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A |
Turn Off Time-Nom (toff) | 132 ns |
IGBT Type | Field Stop |
Gate Charge | 119nC |
Current - Collector Pulsed (Icm) | 120A |
Td (on/off) @ 25°C | 12ns/92ns |