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FGD3040G2-F085

FGD3040G2-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FGD3040G2-F085
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 508
  • Description: FGD3040G2-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series Automotive, AEC-Q101, EcoSPARK®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 150W
Terminal Form GULL WING
Base Part Number FGD3040
JESD-30 Code R-PSSO-G2
Number of Elements 1
Rise Time-Max 7000ns
Element Configuration Single
Case Connection COLLECTOR
Input Type Logic
Power - Max 150W
Clamping Voltage 400V
Transistor Application AUTOMOTIVE IGNITION
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.5V
Max Collector Current 41A
Collector Emitter Breakdown Voltage 400V
Collector Emitter Saturation Voltage 1.15V
Max Breakdown Voltage 400V
Test Condition 300V, 6.5A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic 1.25V @ 4V, 6A
Gate Charge 21nC
Td (on/off) @ 25°C -/4.8μs
Gate-Emitter Voltage-Max 14V
Gate-Emitter Thr Voltage-Max 2.2V
Fall Time-Max (tf) 15000ns
Radiation Hardening No
See Relate Datesheet

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