Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Weight | 260.37mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Published | 2013 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
HTS Code | 8541.29.00.95 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 60W |
Terminal Form | GULL WING |
Base Part Number | FGD3N60 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 60W |
Case Connection | COLLECTOR |
Input Type | Standard |
Transistor Application | MOTOR CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 6A |
Reverse Recovery Time | 21ns |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2.4V |
Max Breakdown Voltage | 600V |
Turn On Time | 7.4 ns |
Test Condition | 400V, 3A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.52V @ 15V, 3A |
Turn Off Time-Nom (toff) | 146 ns |
IGBT Type | NPT |
Gate Charge | 1.6nC |
Current - Collector Pulsed (Icm) | 9A |
Td (on/off) @ 25°C | 5.5ns/22ns |
Switching Energy | 52μJ (on), 30μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 8.5V |
Height | 2.3mm |
Length | 6.6mm |
Width | 6.1mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |