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FGD3N60UNDF

FGD3N60UNDF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FGD3N60UNDF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 181
  • Description: FGD3N60UNDF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 60W
Terminal Form GULL WING
Base Part Number FGD3N60
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 60W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 6A
Reverse Recovery Time 21ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.4V
Max Breakdown Voltage 600V
Turn On Time 7.4 ns
Test Condition 400V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.52V @ 15V, 3A
Turn Off Time-Nom (toff) 146 ns
IGBT Type NPT
Gate Charge 1.6nC
Current - Collector Pulsed (Icm) 9A
Td (on/off) @ 25°C 5.5ns/22ns
Switching Energy 52μJ (on), 30μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 8.5V
Height 2.3mm
Length 6.6mm
Width 6.1mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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