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FGH25T120SMD-F155

FGH25T120SMD-F155 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FGH25T120SMD-F155
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 411
  • Description: FGH25T120SMD-F155 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 428W
Peak Reflow Temperature (Cel) 260
Number of Elements 1
Element Configuration Single
Power Dissipation 428W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 50A
Reverse Recovery Time 60ns
JEDEC-95 Code TO-247AB
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.9V
Turn On Time 88 ns
Test Condition 600V, 25A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 25A
Turn Off Time-Nom (toff) 584 ns
IGBT Type Trench Field Stop
Gate Charge 225nC
Current - Collector Pulsed (Icm) 100A
Td (on/off) @ 25°C 40ns/490ns
Switching Energy 1.74mJ (on), 560μJ (off)
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 7.5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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