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FGH30N60LSDTU

FGH30N60LSDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FGH30N60LSDTU
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 141
  • Description: FGH30N60LSDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 480W
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 18 ns
Power - Max 480W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 250 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 35 ns
JEDEC-95 Code TO-247AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 600V
Turn On Time 62 ns
Test Condition 400V, 30A, 6.8 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.4V @ 15V, 30A
Turn Off Time-Nom (toff) 2870 ns
Gate Charge 225nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 18ns/250ns
Switching Energy 1.1mJ (on), 21mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
Fall Time-Max (tf) 2000ns
Height 20.82mm
Length 15.87mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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