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FGH30T65UPDT-F155

FGH30T65UPDT-F155 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FGH30T65UPDT-F155
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 501
  • Description: FGH30T65UPDT-F155 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE, NOT REC (Last Updated: 4 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 250W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 60A
Reverse Recovery Time 43 ns
JEDEC-95 Code TO-247AB
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 2.1V
Turn On Time 52 ns
Test Condition 400V, 30A, 8 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A
Turn Off Time-Nom (toff) 170 ns
IGBT Type Trench Field Stop
Gate Charge 155nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 22ns/139ns
Switching Energy 760μJ (on), 400μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7.5V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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