Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 6.39g |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2013 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
HTS Code | 8541.29.00.95 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 555W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Element Configuration | Single |
Power Dissipation | 555W |
Input Type | Standard |
Turn On Delay Time | 40 ns |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 475 ns |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 80A |
Reverse Recovery Time | 65 ns |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 1.8V |
Test Condition | 600V, 40A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 40A |
Max Junction Temperature (Tj) | 175°C |
Continuous Collector Current | 80A |
IGBT Type | Trench Field Stop |
Gate Charge | 370nC |
Current - Collector Pulsed (Icm) | 160A |
Td (on/off) @ 25°C | 40ns/475ns |
Switching Energy | 2.7mJ (on), 1.1mJ (off) |
Gate-Emitter Voltage-Max | 25V |
Gate-Emitter Thr Voltage-Max | 7.5V |
Height | 24.75mm |
Length | 15.87mm |
Width | 4.82mm |
RoHS Status | ROHS3 Compliant |