FGH40T65SHDF-F155
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 6.39g |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2016 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 268W |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 268W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 650V |
| Max Collector Current | 80A |
| Reverse Recovery Time | 101 ns |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 1.45V |
| Test Condition | 400V, 40A, 6 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.81V @ 15V, 40A |
| IGBT Type | Field Stop |
| Gate Charge | 68nC |
| Current - Collector Pulsed (Icm) | 120A |
| Td (on/off) @ 25°C | 18ns/64ns |
| Switching Energy | 1.22mJ (on), 440μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 7.5V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
