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FGH50N3

FGH50N3 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FGH50N3
  • Package: TO-247-3
  • Datasheet: -
  • Stock: 318
  • Description: FGH50N3 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 300V
Max Power Dissipation 463W
Current Rating 75A
Number of Elements 1
Element Configuration Single
Power Dissipation 463W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 20 ns
Transistor Application POWER CONTROL
Rise Time 15ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 135 ns
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 75A
Collector Emitter Breakdown Voltage 300V
Collector Emitter Saturation Voltage 1.3V
Turn On Time 32 ns
Test Condition 180V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.4V @ 15V, 30A
Turn Off Time-Nom (toff) 162 ns
IGBT Type PT
Gate Charge 180nC
Current - Collector Pulsed (Icm) 240A
Td (on/off) @ 25°C 20ns/135ns
Switching Energy 130μJ (on), 92μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Height 20.82mm
Length 15.87mm
Width 4.82mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
See Relate Datesheet

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