Parameters | |
---|---|
Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 6.39g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2002 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | LOW CONDUCTION LOSS |
HTS Code | 8541.29.00.95 |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 300V |
Max Power Dissipation | 463W |
Current Rating | 75A |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 463W |
Case Connection | COLLECTOR |
Input Type | Standard |
Turn On Delay Time | 20 ns |
Transistor Application | POWER CONTROL |
Rise Time | 15ns |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 135 ns |
Collector Emitter Voltage (VCEO) | 300V |
Max Collector Current | 75A |
Collector Emitter Breakdown Voltage | 300V |
Collector Emitter Saturation Voltage | 1.3V |
Turn On Time | 32 ns |
Test Condition | 180V, 30A, 5 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.4V @ 15V, 30A |
Turn Off Time-Nom (toff) | 162 ns |
IGBT Type | PT |
Gate Charge | 180nC |
Current - Collector Pulsed (Icm) | 240A |
Td (on/off) @ 25°C | 20ns/135ns |
Switching Energy | 130μJ (on), 92μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5.5V |
Height | 20.82mm |
Length | 15.87mm |
Width | 4.82mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |