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FGH60N60SFDTU

FGH60N60SFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FGH60N60SFDTU
  • Package: TO-247-3
  • Datasheet: -
  • Stock: 557
  • Description: FGH60N60SFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 378W
Base Part Number FGH60N60
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 378W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 120A
Reverse Recovery Time 47 ns
JEDEC-95 Code TO-247AB
Collector Emitter Breakdown Voltage 600V
Turn On Time 66 ns
Test Condition 400V, 60A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 60A
Turn Off Time-Nom (toff) 187 ns
IGBT Type Field Stop
Gate Charge 198nC
Current - Collector Pulsed (Icm) 180A
Td (on/off) @ 25°C 22ns/134ns
Switching Energy 1.79mJ (on), 670μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Fall Time-Max (tf) 62ns
Height 20.6mm
Length 15.6mm
Width 4.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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