FGH60N60SMD-F085
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | Automotive, AEC-Q101 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Rise Time-Max | 60ns |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 600W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Reverse Recovery Time | 42ns |
| JEDEC-95 Code | TO-247AB |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 120A |
| Power Dissipation-Max (Abs) | 600W |
| Turn On Time | 66 ns |
| Test Condition | 400V, 60A, 3 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 60A |
| Turn Off Time-Nom (toff) | 139 ns |
| IGBT Type | Field Stop |
| Gate Charge | 280nC |
| Current - Collector Pulsed (Icm) | 180A |
| Td (on/off) @ 25°C | 22ns/116ns |
| Switching Energy | 1.59mJ (on), 390μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6V |
| Fall Time-Max (tf) | 20ns |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
