Parameters | |
---|---|
Lifecycle Status | ACTIVE, NOT REC (Last Updated: 6 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Weight | 6.39g |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
HTS Code | 8541.29.00.95 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 375W |
Rise Time-Max | 56ns |
Element Configuration | Single |
Input Type | Standard |
Power - Max | 375W |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 650V |
Max Collector Current | 150A |
Reverse Recovery Time | 85 ns |
Collector Emitter Breakdown Voltage | 650V |
Collector Emitter Saturation Voltage | 2.3V |
Test Condition | 400V, 75A, 3 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 75A |
IGBT Type | Trench Field Stop |
Gate Charge | 385nC |
Current - Collector Pulsed (Icm) | 225A |
Td (on/off) @ 25°C | 32ns/166ns |
Switching Energy | 2.85mJ (on), 1.2mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 7.5V |
Height | 20.82mm |
Length | 15.87mm |
Width | 4.82mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |