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FGH80N60FDTU

FGH80N60FDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FGH80N60FDTU
  • Package: TO-247-3
  • Datasheet: -
  • Stock: 282
  • Description: FGH80N60FDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Packaging Tube
Published 2011
Fall Time-Max (tf) 100ns
JESD-609 Code e3
Height 20.6mm
Length 15.6mm
Pbfree Code yes
Part Status Active
Width 4.7mm
Radiation Hardening No
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 290W
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 21 ns
Power - Max 290W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 126 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Reverse Recovery Time 36 ns
JEDEC-95 Code TO-247AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 600V
Turn On Time 74 ns
Test Condition 400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
Turn Off Time-Nom (toff) 201 ns
IGBT Type Field Stop
Gate Charge 120nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 21ns/126ns
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mount Through Hole
Switching Energy 1mJ (on), 520μJ (off)
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Gate-Emitter Voltage-Max 20V
Transistor Element Material SILICON
Gate-Emitter Thr Voltage-Max 7V
Operating Temperature -55°C~150°C TJ
See Relate Datesheet

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