Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-264-3, TO-264AA |
Number of Pins | 3 |
Weight | 6.756g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2008 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
HTS Code | 8541.29.00.95 |
Voltage - Rated DC | 1.2kV |
Max Power Dissipation | 500W |
Current Rating | 64A |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 500W |
Input Type | Standard |
Turn On Delay Time | 15 ns |
Transistor Application | POWER CONTROL |
Rise Time | 20ns |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 110 ns |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 64A |
Reverse Recovery Time | 112 ns |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 3.15V |
Turn On Time | 45 ns |
Test Condition | 600V, 40A, 5 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 40A |
Max Junction Temperature (Tj) | 150°C |
Continuous Collector Current | 64A |
Turn Off Time-Nom (toff) | 165 ns |
IGBT Type | NPT |
Gate Charge | 220nC |
Current - Collector Pulsed (Icm) | 160A |
Td (on/off) @ 25°C | 15ns/110ns |
Switching Energy | 2.3mJ (on), 1.1mJ (off) |
Height | 29mm |
Length | 20mm |
Width | 5mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |