FGL60N100BNTDTU
| Parameters | |
|---|---|
| Length | 20mm |
| Width | 5mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 1 week ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Number of Pins | 3 |
| Weight | 6.756g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.29.00.95 |
| Voltage - Rated DC | 1kV |
| Max Power Dissipation | 180W |
| Current Rating | 60A |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 180W |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1kV |
| Max Collector Current | 60A |
| Reverse Recovery Time | 1.2 μs |
| Collector Emitter Breakdown Voltage | 1kV |
| Voltage - Collector Emitter Breakdown (Max) | 1000V |
| Collector Emitter Saturation Voltage | 1.5V |
| Turn On Time | 460 ns |
| Test Condition | 600V, 60A, 51 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 60A |
| Turn Off Time-Nom (toff) | 760 ns |
| IGBT Type | NPT and Trench |
| Gate Charge | 275nC |
| Current - Collector Pulsed (Icm) | 120A |
| Td (on/off) @ 25°C | 140ns/630ns |
| Height | 26mm |
See Relate Datesheet
