Parameters | |
---|---|
Additional Feature | LOW CONDUCTION LOSS |
HTS Code | 8541.29.00.95 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 83W |
Number of Elements | 1 |
Element Configuration | Single |
Input Type | Standard |
Power - Max | 83W |
Transistor Application | GENERAL PURPOSE SWITCHING |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 10A |
JEDEC-95 Code | TO-220AB |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 1.8V |
Turn On Time | 5.9 ns |
Test Condition | 400V, 5A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 3.2V @ 12V, 14A |
Turn Off Time-Nom (toff) | 187 ns |
IGBT Type | Field Stop |
Gate Charge | 18.3nC |
Current - Collector Pulsed (Icm) | 36A |
Td (on/off) @ 25°C | 4.3ns/36ns |
Switching Energy | 38μJ (on), 130μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 4.5V |
Height | 16.51mm |
Length | 10.67mm |
Width | 4.83mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Weight | 1.8g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2013 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |