Parameters | |
---|---|
Turn On Time | 55 ns |
Test Condition | 200V, 20A, 20 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 10A |
Turn Off Time-Nom (toff) | 400 ns |
IGBT Type | Trench |
Gate Charge | 65nC |
Current - Collector Pulsed (Icm) | 80A |
Td (on/off) @ 25°C | 22ns/130ns |
RoHS Status | ROHS3 Compliant |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 3 |
Additional Feature | LOW CONDUCTION LOSS |
Terminal Position | SINGLE |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | COMMERCIAL |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Case Connection | ISOLATED |
Input Type | Standard |
Power - Max | 44.6W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Reverse Recovery Time | 22ns |
JEDEC-95 Code | TO-220AB |
Voltage - Collector Emitter Breakdown (Max) | 300V |