Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 8 hours ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 Variant |
Number of Pins | 3 |
Weight | 7.629g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2010 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | LOW CONDUCTION LOSS |
HTS Code | 8541.29.00.95 |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 750W |
Number of Elements | 1 |
Element Configuration | Single |
Input Type | Standard |
Power - Max | 750W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 150A |
Reverse Recovery Time | 55 ns |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 1.9V |
Turn On Time | 76 ns |
Test Condition | 400V, 75A, 3 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 75A |
Turn Off Time-Nom (toff) | 161 ns |
IGBT Type | Field Stop |
Gate Charge | 248nC |
Current - Collector Pulsed (Icm) | 225A |
Td (on/off) @ 25°C | 24ns/136ns |
Switching Energy | 2.3mJ (on), 770μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6.5V |
Fall Time-Max (tf) | 29ns |
Height | 20.32mm |
Length | 15.87mm |
Width | 4.82mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |