FID35-06C
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | i4-Pac™-5 |
| Number of Pins | 5 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2004 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 125W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 5 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Power - Max | 125W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 38A |
| Reverse Recovery Time | 50 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Turn On Time | 80 ns |
| Test Condition | 300V, 25A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 25A |
| Turn Off Time-Nom (toff) | 390 ns |
| IGBT Type | NPT |
| Gate Charge | 140nC |
| Switching Energy | 1.1mJ (on), 600μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
