FIO50-12BD
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | i4-Pac™-5 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2004 |
| JESD-609 Code | e1 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature | UL RECOGNIZED |
| Max Power Dissipation | 200W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 5 |
| JESD-30 Code | R-PSIP-T5 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Power - Max | 200W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.6V |
| Max Collector Current | 50A |
| Reverse Recovery Time | 150ns |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Turn On Time | 135 ns |
| Test Condition | 600V, 30A, 39 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 30A |
| Turn Off Time-Nom (toff) | 490 ns |
| IGBT Type | NPT |
| Gate Charge | 150nC |
| Switching Energy | 4.6mJ (on), 2.2mJ (off) |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
