Parameters | |
---|---|
Frequency | 30MHz |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 100W |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 30MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 140V |
Max Collector Current | 10A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 3A 4V |
Current - Collector Cutoff (Max) | 10μA ICBO |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 500mA, 5A |
Collector Emitter Breakdown Voltage | 140V |
Transition Frequency | 30MHz |
Collector Emitter Saturation Voltage | -500mV |
Collector Base Voltage (VCBO) | -200V |
Emitter Base Voltage (VEBO) | -6V |
hFE Min | 50 |
Height | 20.1mm |
Length | 15.8mm |
Width | 5mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Number of Pins | 3 |
Weight | 6.401g |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
Published | 2008 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | TIN |
Subcategory | Other Transistors |
Voltage - Rated DC | -140V |
Max Power Dissipation | 100W |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -10A |