Parameters | |
---|---|
hFE Min | 5 |
Max Junction Temperature (Tj) | 150°C |
Height | 29mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-264-3, TO-264AA |
Number of Pins | 3 |
Weight | 6.756g |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
Published | 2014 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | 800V |
Max Power Dissipation | 200W |
Current Rating | 20A |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 200W |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 800V |
Max Collector Current | 30A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 5.5 @ 11A 5V |
Current - Collector Cutoff (Max) | 1mA |
Vce Saturation (Max) @ Ib, Ic | 3V @ 2.75A, 11A |
Collector Emitter Breakdown Voltage | 800V |
Collector Emitter Saturation Voltage | 3V |
Collector Base Voltage (VCBO) | 1.7kV |
Emitter Base Voltage (VEBO) | 6V |