Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Number of Pins | 3 |
Weight | 240mg |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Box (TB) |
Published | 2007 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 |
HTS Code | 8541.21.00.95 |
Subcategory | BIP General Purpose Small Signal |
Voltage - Rated DC | 50V |
Max Power Dissipation | 300mW |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 100mA |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 300mW |
Transistor Application | SWITCHING |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 50V |
Max Collector Current | 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10mA 5V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA, 10mA |
Collector Emitter Breakdown Voltage | 50V |
Transition Frequency | 250MHz |
Max Breakdown Voltage | 50V |
Frequency - Transition | 250MHz |
Collector Base Voltage (VCBO) | 50V |
Emitter Base Voltage (VEBO) | 10V |
hFE Min | 20 |
Continuous Collector Current | 100mA |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |