Parameters | |
---|---|
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
HTS Code | 8541.29.00.95 |
Subcategory | Other Transistors |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | FJP13007 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Power - Max | 80W |
Transistor Application | SWITCHING |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
DC Current Gain (hFE) (Min) @ Ic, Vce | 26 @ 2A 5V |
JEDEC-95 Code | TO-220AB |
Vce Saturation (Max) @ Ib, Ic | 3V @ 2A, 8A |
Voltage - Collector Emitter Breakdown (Max) | 400V |
Current - Collector (Ic) (Max) | 8A |
Transition Frequency | 4MHz |
Frequency - Transition | 4MHz |
Power Dissipation-Max (Abs) | 80W |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |