FJP2145TU
| Parameters | |
|---|---|
| Collector Emitter Breakdown Voltage | 800V |
| Gate to Source Voltage (Vgs) | 20V |
| Transition Frequency | 28.4MHz |
| Collector Emitter Saturation Voltage | 151mV |
| Collector Base Voltage (VCBO) | 1.1kV |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 20 |
| Height | 16.51mm |
| Length | 10.67mm |
| Width | 4.83mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~125°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | ESBC™ |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 120W |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 120W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 15MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 800V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 200mA 5V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 300mA, 1.5A |
See Relate Datesheet
