Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Number of Pins | 3 |
Weight | 2.27g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~125°C TJ |
Packaging | Tube |
Published | 2013 |
Series | ESBC™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Max Power Dissipation | 40W |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 40W |
Case Connection | ISOLATED |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 15MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 800V |
Max Collector Current | 5A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 200mA 5V |
Current - Collector Cutoff (Max) | 10μA ICBO |
Vce Saturation (Max) @ Ib, Ic | 2V @ 300mA, 1.5A |
Collector Emitter Breakdown Voltage | 800V |
Gate to Source Voltage (Vgs) | 20V |
Transition Frequency | 28.4MHz |
Collector Emitter Saturation Voltage | 159mV |
Collector Base Voltage (VCBO) | 1.1kV |
Emitter Base Voltage (VEBO) | 7V |
hFE Min | 20 |
Height | 16.07mm |
Length | 10.36mm |
Width | 4.9mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |